Samsung Electronics is making available a high bandwidth memory (HBM2E) product that it says will deliver the highest DRAM performance levels for use in next-generation supercomputers, graphics systems, and artificial intelligence (AI).
The South Korean firm claimed that its new solution a Flashbolt will deliver a 3.2 gigabits-per-second (Gbps) data transfer speed per pin, which is 33 percent faster than the previous-generation HBM2. Flashbolt has a density of 16Gb per die, double the capacity of the previous generation. The company said that with these improvements, a single Samsung HBM2E package will offer a 410 gigabytes-per-second (GBps) data bandwidth and 16GB of memory.
“Flashbolt’s industry-leading performance will enable enhanced solutions for next-generation data centers, artificial intelligence, machine learning, and graphics applications,” said Jinman Han, senior vice president of Memory Product Planning and Application Engineering Team at Samsung Electronics.
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“We will continue to expand our premium DRAM offering, and improve our ‘high-performance, high capacity, and low power’ memory segment to meet market demand.”
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